Dislocations in GaAs grown by vapour pressure controlled Czochralski technique

T. Tuomi, L. Knuuttila, J. Riikonen, P.J. McNally, W. Chen, J. Kanatharana, M. Neubert, P. Rudolph

    Research output: Working paperProfessional

    Original languageEnglish
    Pages83
    Publication statusPublished - 2002
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameHASYLAB Users' Meeting, Hamburg, Germany, January 25, 2002

    Keywords

    • semiconductors
    • synchrotron X-ray topography

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