Dislocation pinning in helium-implanted tungsten : A molecular dynamics study

Suchandrima Das*, Andrea Sand, Felix Hofmann

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Using molecular dynamics simulations, we investigate the interaction of edge dislocations with He-filled Frenkel pairs (He2V-SIA), the predominant defect type in helium-implanted tungsten. Clusters of 3–10 He2V-SIA are seen to be stable with their pinning strength increasing with size. For all cluster sizes, the dislocation bows around the cluster and unpins while carrying SIAs with it. The helium-vacancy complex and new vacancies left behind, have little pinning effect, explaining the “defect-clearing” and experimentally observed deformation softening. The predicted solute hardening for 3000 appm helium-induced defect distribution of varying sizes, is in excellent agreement with previous experimental observations.

Original languageEnglish
Article number155293
Pages (from-to)1-12
Number of pages12
JournalJournal of Nuclear Materials
Volume601
DOIs
Publication statusPublished - Dec 2024
MoE publication typeA1 Journal article-refereed

Keywords

  • Dislocation mobility
  • Hardness
  • Helium-implanted tungsten
  • Micromechanics
  • Molecular dynamics
  • Plasticity

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