Dislocation evolution in 4H-SiC epitaxial layers

H. Jacobson, J. Birch, R. Yakimova, M. Syväjärvi, J.P. Bergman, A. Ellison, T. Tuomi, E. Janzén

    Research output: Contribution to journalArticleScientificpeer-review

    91 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)6354-6360
    JournalJournal of Applied Physics
    Issue number91
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed


    • semiconductors
    • synchrotron X-ray topography

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