Dislocation evolution in 4H-SiC epitaxial layers

H. Jacobson; J. Birch; R. Yakimova; M. Syväjärvi; J.P. Bergman; A. Ellison; T. Tuomi; E. Janzén

Dislocation evolution in 4H-SiC epitaxial layers

H. Jacobson, J. Birch, R. Yakimova, M. Syväjärvi, J.P. Bergman, A. Ellison, T. Tuomi, E. Janzén

Research output: Contribution to journal › Article › Scientific › peer-review

91 Citations (Scopus)

Original language	English
Pages (from-to)	6354-6360
Journal	Journal of Applied Physics
Issue number	91
Publication status	Published - 2002
MoE publication type	A1 Journal article-refereed

Keywords

semiconductors
synchrotron X-ray topography

Cite this

@article{fa8d06b8bc8247c480234ae016db64e4,

title = "Dislocation evolution in 4H-SiC epitaxial layers",

keywords = "semiconductors, synchrotron X-ray topography, semiconductors, synchrotron X-ray topography, semiconductors, synchrotron X-ray topography",

author = "H. Jacobson and J. Birch and R. Yakimova and M. Syv{\"a}j{\"a}rvi and J.P. Bergman and A. Ellison and T. Tuomi and E. Janz{\'e}n",

year = "2002",

language = "English",

pages = "6354--6360",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "91",

}

TY - JOUR

T1 - Dislocation evolution in 4H-SiC epitaxial layers

AU - Jacobson, H.

AU - Birch, J.

AU - Yakimova, R.

AU - Syväjärvi, M.

AU - Bergman, J.P.

AU - Ellison, A.

AU - Tuomi, T.

AU - Janzén, E.

PY - 2002

Y1 - 2002

KW - semiconductors

KW - synchrotron X-ray topography

KW - semiconductors

KW - synchrotron X-ray topography

KW - semiconductors

KW - synchrotron X-ray topography

M3 - Article

SP - 6354

EP - 6360

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 91

ER -