Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films

R. L. Puurunen*, T. Suni, O. Ylivaara, H. Kondo, M. Ammar, T. Ishida, H. Fujita, A. Bosseboeuf, S. Zaima, H. Kattelus

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

5 Citations (Scopus)

Abstract

In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO2 insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO2, and Al2O3 for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.

Original languageEnglish
Title of host publication2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages978-981
Number of pages4
DOIs
Publication statusPublished - 2011
MoE publication typeA4 Article in a conference publication
EventInternational Solid-State Sensors, Actuators and Microsystems Conference - Beijing, China
Duration: 5 Jun 20119 Jun 2011
Conference number: 16

Conference

ConferenceInternational Solid-State Sensors, Actuators and Microsystems Conference
Abbreviated titleTRANSDUCERS
CountryChina
CityBeijing
Period05/06/201109/06/2011

Keywords

  • AlO
  • ALD
  • Atomic layer deposition
  • silicon-on-insulator
  • TiO
  • wafer bonding

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