Direct identification of As vacancies in GaAs using positron annihilation calibrated by scanning tunneling microscopy

J. Gebauer, R. Krause-Rehberg, C. Domke, Ph. Ebert, K. Urban, T.E.M Staab

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
JournalPhysical Review B
Volume63
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

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