Direct Growth of Light-Emitting III–V Nanowires on Flexible Plastic Substrates

Vladislav Khayrudinov*, Maxim Remennyi, Vidur Raj, Prokhor Alekseev, Boris Matveev, Harri Lipsanen, Tuomas Haggren*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)
38 Downloads (Pure)

Abstract

Semiconductor nanowires are routinely grown on high-priced crystalline substrates as it is extremely challenging to grow directly on plastics and flexible substrates due to high-temperature requirements and substrate preparation. At the same time, plastic substrates can offer many advantages such as extremely low price, light weight, mechanical flexibility, shock and thermal resistance, and biocompatibility. We explore the direct growth of high-quality III–V nanowires on flexible plastic substrates by metal-organic vapor phase epitaxy (MOVPE). We synthesize InAs and InP nanowires on polyimide and show that the fabricated NWs are optically active with strong light emission in the mid-infrared range. We create a monolithic flexible nanowire-based p–n junction device on plastic in just two fabrication steps. Overall, we demonstrate that III–V nanowires can be synthesized directly on flexible plastic substrates inside a MOVPE reactor, and we believe that our results will further advance the development of the nanowire-based flexible electronic devices.
Original languageEnglish
Pages (from-to)7484–7491
Number of pages8
JournalACS Nano
Volume14
Issue number6
DOIs
Publication statusPublished - 23 Jun 2020
MoE publication typeA1 Journal article-refereed

Keywords

  • semiconductor nanowires
  • flexible substrates
  • plastic substrates
  • low-temperature growth
  • MOVPE
  • InAs

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