Direct GaAs Nanowire Growth and Monolithic LightEmitting Diode Fabrication on Flexible Plastic Substrates

V Khayrudinov, A Sorokina, V Raj, N Gagrani, T Koskinen, H Jiang, I Tittonen, C Jagadish, HH Tan, H Lipsanen, T Haggren

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Abstract

The growth of self-catalyzed GaAs nanowires (NWs) and monolithic light-emitting diode (LED) directly on flexible plastic substrates is reported. Dense GaAs NW forest is attained in self-catalyzed mode using metalorganic vapor phase epitaxy. The NWs are shown to be crystalline with a zinc-blende phase. The optical properties of the GaAs NWs are found to be promising in both photoluminescence emission and light-trapping based on reflectance and transmittance measurements. The LED is fabricated from p-type NWs by depositing Au as Ohmic contact and TiO2/ITO as an electron-selective contact. The demonstrated NW growth and LED fabrication represent a significant step toward low-cost, industrially feasible flexible III–V NW optoelectronic applications, as plastic is inexpensive, and the fabrication steps are compatible with roll-to-roll processing.
Original languageEnglish
Article number2100311
Number of pages8
JournalAdvanced Photonics Research
Volume3
Issue number8
DOIs
Publication statusPublished - Aug 2022
MoE publication typeA1 Journal article-refereed

Keywords

  • GaAs nanowires
  • Bendable
  • Diodes
  • Flexible plastic substrates
  • Light-emitting

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  • -: Photonics Research and Innovation

    Lipsanen, H. (Principal investigator), Ahmed, F. (Project Member), Mehmood, N. (Project Member) & Ding, E. (Project Member)

    01/01/201931/12/2022

    Project: Academy of Finland: Other research funding

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