Abstract
Scanning tunneling microscopy images of 4.5° misoriented double B stepped Si(001) have been analyzed to determine the double-layer step-edge formation energies of the energetically stable double step (B-type) as well as the energetically unstable double step (A-type). The ordering of the various single- and double-layer step-edge formation energies is in accordance with semiempirical tight-binding-based total-energy calculations performed by Chadi [Phys. Rev. Lett. 59, 1691 (1987)]. Finally, the miscut angle at which the transition between the single- and double-layer stepped surface occurs as calculated using the experimentally obtained step-edge formation energies is in agreement with the experiments.
Original language | English |
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Pages (from-to) | 15429-15431 |
Number of pages | 3 |
Journal | Physical Review B |
Volume | 53 |
Issue number | 23 |
DOIs | |
Publication status | Published - 15 Jun 1996 |
MoE publication type | A1 Journal article-refereed |