Direct conversion receiver for GSM900, DCS1800, PCS1900, and WCDMA

Jussi Ryynänen; Kalle Kivekäs; Jarkko Jussila; Aarno Pärssinen; Kari Halonen

doi:10.1109/ICECS.2003.1301943

Direct conversion receiver for GSM900, DCS1800, PCS1900, and WCDMA

Jussi Ryynänen^*, Kalle Kivekäs, Jarkko Jussila, Aarno Pärssinen, Kari Halonen

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Abstract

A single-chip, multi-mode direct conversion receiver designed for GSM900, DCS1800, PCS1900, and UTRAFDD WCDMA, applications is described. The low-noise amplifier uses only four on-chip inductors. The downconversion mixers include a method to improve the receiver IIP2 to over +40dBm. The baseband circuit achieves over +90dBV IIP2. The noise figure of the SiGe BiCMOS receiver is less than 4.8dB in all GSM modes, and 3.5dB in WCDMA. The power consumption in all GSM modes is 42mW and in WCDMA 50mW. The silicon area is 10mm².

Original language	English
Title of host publication	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Pages	942-945
Number of pages	4
Volume	2
DOIs	https://doi.org/10.1109/ICECS.2003.1301943
Publication status	Published - 2003
MoE publication type	A4 Conference publication
Event	IEEE International Conference on Electronics, Circuits and Systems - Sharjah, United Arab Emirates Duration: 14 Dec 2003 → 17 Dec 2003 Conference number: 10

Conference

Conference	IEEE International Conference on Electronics, Circuits and Systems
Abbreviated title	ICECS
Country/Territory	United Arab Emirates
City	Sharjah
Period	14/12/2003 → 17/12/2003

Keywords

3G mobile communication
BiCMOS analogue integrated circuits
cellular radio
mixers (circuits)
multiple access

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10.1109/ICECS.2003.1301943

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@inproceedings{337576bab7924bf492b31942cde9c055,

title = "Direct conversion receiver for GSM900, DCS1800, PCS1900, and WCDMA",

abstract = "A single-chip, multi-mode direct conversion receiver designed for GSM900, DCS1800, PCS1900, and UTRAFDD WCDMA, applications is described. The low-noise amplifier uses only four on-chip inductors. The downconversion mixers include a method to improve the receiver IIP2 to over +40dBm. The baseband circuit achieves over +90dBV IIP2. The noise figure of the SiGe BiCMOS receiver is less than 4.8dB in all GSM modes, and 3.5dB in WCDMA. The power consumption in all GSM modes is 42mW and in WCDMA 50mW. The silicon area is 10mm2.",

keywords = "3G mobile communication, BiCMOS analogue integrated circuits, cellular radio, mixers (circuits), multiple access, 3G mobile communication, BiCMOS analogue integrated circuits, cellular radio, mixers (circuits), multiple access, 3G mobile communication, BiCMOS analogue integrated circuits, cellular radio, mixers (circuits), multiple access",

author = "Jussi Ryyn{\"a}nen and Kalle Kivek{\"a}s and Jarkko Jussila and Aarno P{\"a}rssinen and Kari Halonen",

year = "2003",

doi = "10.1109/ICECS.2003.1301943",

language = "English",

isbn = "0780381637",

volume = "2",

pages = "942--945",

booktitle = "Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems",

note = "IEEE International Conference on Electronics, Circuits and Systems, ICECS ; Conference date: 14-12-2003 Through 17-12-2003",

}

Ryynänen, J, Kivekäs, K, Jussila, J, Pärssinen, A & Halonen, K 2003, Direct conversion receiver for GSM900, DCS1800, PCS1900, and WCDMA. in Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems. vol. 2, 301943, pp. 942-945, IEEE International Conference on Electronics, Circuits and Systems, Sharjah, United Arab Emirates, 14/12/2003. https://doi.org/10.1109/ICECS.2003.1301943

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AU - Ryynänen, Jussi

AU - Kivekäs, Kalle

AU - Jussila, Jarkko

AU - Pärssinen, Aarno

AU - Halonen, Kari

N1 - Conference code: 10

PY - 2003

Y1 - 2003

N2 - A single-chip, multi-mode direct conversion receiver designed for GSM900, DCS1800, PCS1900, and UTRAFDD WCDMA, applications is described. The low-noise amplifier uses only four on-chip inductors. The downconversion mixers include a method to improve the receiver IIP2 to over +40dBm. The baseband circuit achieves over +90dBV IIP2. The noise figure of the SiGe BiCMOS receiver is less than 4.8dB in all GSM modes, and 3.5dB in WCDMA. The power consumption in all GSM modes is 42mW and in WCDMA 50mW. The silicon area is 10mm2.

AB - A single-chip, multi-mode direct conversion receiver designed for GSM900, DCS1800, PCS1900, and UTRAFDD WCDMA, applications is described. The low-noise amplifier uses only four on-chip inductors. The downconversion mixers include a method to improve the receiver IIP2 to over +40dBm. The baseband circuit achieves over +90dBV IIP2. The noise figure of the SiGe BiCMOS receiver is less than 4.8dB in all GSM modes, and 3.5dB in WCDMA. The power consumption in all GSM modes is 42mW and in WCDMA 50mW. The silicon area is 10mm2.

KW - 3G mobile communication

KW - BiCMOS analogue integrated circuits

KW - cellular radio

KW - mixers (circuits)

KW - multiple access

KW - 3G mobile communication

KW - BiCMOS analogue integrated circuits

KW - cellular radio

KW - mixers (circuits)

KW - multiple access

KW - 3G mobile communication

KW - BiCMOS analogue integrated circuits

KW - cellular radio

KW - mixers (circuits)

KW - multiple access

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DO - 10.1109/ICECS.2003.1301943

M3 - Conference contribution

AN - SCOPUS:77956032694

SN - 0780381637

SN - 9780780381636

VL - 2

SP - 942

EP - 945

BT - Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

T2 - IEEE International Conference on Electronics, Circuits and Systems

Y2 - 14 December 2003 through 17 December 2003

ER -

Direct conversion receiver for GSM900, DCS1800, PCS1900, and WCDMA

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