Direct antisite formation in electron irradiation GaAs

T. Mattila, R.M. Nieminen

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

We investigate the antisite formation in GaAs by molecular dynamics simulation with a realistic many-atom potential. The recoil energies are chosen to correspond to the values encountered in electron irradiation experiments. The probability of forming antisites directly during the cascade is substantial. The antisite defects are stable and are likely to survive during long-term annealing. We estimate the angle-dependent threshold for antisite formation and discuss the creation mechanism. The cross sections for antisite and vacancy formation are compared.
Original languageEnglish
Pages (from-to)2721-2724
JournalPhysical Review Letters
Volume74
Issue number14
DOIs
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed

Keywords

  • defects
  • electron irradiation
  • GaAs

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