Diffusion-driven GaInP/GaAs light-emitting diodes enhanced by modulation doping

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Diffusion-driven charge transport (DDCT) in III–V light-emitting diodes (LEDs) can enable unconventional optoelectronic devices and functionality by fundamentally changing device design and the current injection principle. In our recent study, an AlGaAs/GaAs DDCT–LED consisting of an array of lateral heterojunctions was studied for large-area applications at high powers. Here, we investigate the current spreading and recombination uniformity of a modulation doped GaInP/GaAs DDCT–LED. In particular, we analyze how the background doping of the lower GaInP cladding layer (CL) and the GaAs substrate changes the carrier distribution within the active region of the device. Our charge transport simulations based on the drift-diffusion current and continuity equations predict that modulation doping by a p-doped CL provides much higher recombination uniformity at high powers compared to an n-doped CL. Most importantly, improved current spreading is achieved while maintaining excellent device performance.


Original languageEnglish
Article number90
Pages (from-to)1-8
JournalOptical and Quantum Electronics
Issue number3
Publication statusPublished - 1 Mar 2019
MoE publication typeA1 Journal article-refereed

    Research areas

  • Current spreading, Diffusion-driven charge transport (DDCT), Lateral heterojunction (LHJ), Light-emitting diode (LED), Modulation doping

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