Diffusion-driven current transport to near-surface nanostructures

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Abstract

    Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.

    Original languageEnglish
    Title of host publicationProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
    PublisherIEEE Computer Society
    Pages117-118
    Number of pages2
    ISBN (Print)9781479983797
    DOIs
    Publication statusPublished - 10 May 2015
    MoE publication typeA4 Article in a conference publication
    EventInternational Conference on Numerical Simulation of Optoelectronic Devices - Taipei, Taiwan, Republic of China
    Duration: 7 Sep 201511 Sep 2015
    Conference number: 15

    Conference

    ConferenceInternational Conference on Numerical Simulation of Optoelectronic Devices
    Abbreviated title NUSOD
    CountryTaiwan, Republic of China
    CityTaipei
    Period07/09/201511/09/2015

    Keywords

    • Charge carrier processes
    • Doping
    • Electric potential
    • Gallium nitride
    • Nanostructures
    • Optimization
    • Semiconductor process modeling

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