Diffusion-driven current transport to near-surface nanostructures

Pyry Kivisaari; Lauri Riuttanen; Sami Suihkonen; Jani Oksanen

doi:10.1109/NUSOD.2015.7292850

Diffusion-driven current transport to near-surface nanostructures

Pyry Kivisaari, Lauri Riuttanen, Sami Suihkonen, Jani Oksanen

Lund University

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.

Original language	English
Title of host publication	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Publisher	IEEE
Pages	117-118
Number of pages	2
ISBN (Print)	9781479983797
DOIs	https://doi.org/10.1109/NUSOD.2015.7292850
Publication status	Published - 10 May 2015
MoE publication type	A4 Conference publication
Event	International Conference on Numerical Simulation of Optoelectronic Devices - Taipei, Taiwan, Republic of China Duration: 7 Sept 2015 → 11 Sept 2015 Conference number: 15

Conference

Conference	International Conference on Numerical Simulation of Optoelectronic Devices
Abbreviated title	NUSOD
Country/Territory	Taiwan, Republic of China
City	Taipei
Period	07/09/2015 → 11/09/2015

Keywords

Charge carrier processes
Doping
Electric potential
Gallium nitride
Nanostructures
Optimization
Semiconductor process modeling

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10.1109/NUSOD.2015.7292850

Cite this

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title = "Diffusion-driven current transport to near-surface nanostructures",

abstract = "Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.",

keywords = "Charge carrier processes, Doping, Electric potential, Gallium nitride, Nanostructures, Optimization, Semiconductor process modeling",

author = "Pyry Kivisaari and Lauri Riuttanen and Sami Suihkonen and Jani Oksanen",

year = "2015",

month = may,

day = "10",

doi = "10.1109/NUSOD.2015.7292850",

language = "English",

isbn = "9781479983797",

pages = "117--118",

booktitle = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",

publisher = "IEEE",

address = "United States",

note = "International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD ; Conference date: 07-09-2015 Through 11-09-2015",

}

Kivisaari, P, Riuttanen, L, Suihkonen, S & Oksanen, J 2015, Diffusion-driven current transport to near-surface nanostructures. in Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD., 7292850, IEEE, pp. 117-118, International Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, Republic of China, 07/09/2015. https://doi.org/10.1109/NUSOD.2015.7292850

Diffusion-driven current transport to near-surface nanostructures. / Kivisaari, Pyry; Riuttanen, Lauri; Suihkonen, Sami et al.
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD. IEEE, 2015. p. 117-118 7292850.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Diffusion-driven current transport to near-surface nanostructures

AU - Kivisaari, Pyry

AU - Riuttanen, Lauri

AU - Suihkonen, Sami

AU - Oksanen, Jani

N1 - Conference code: 15

PY - 2015/5/10

Y1 - 2015/5/10

N2 - Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.

AB - Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.

KW - Charge carrier processes

KW - Doping

KW - Electric potential

KW - Gallium nitride

KW - Nanostructures

KW - Optimization

KW - Semiconductor process modeling

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U2 - 10.1109/NUSOD.2015.7292850

DO - 10.1109/NUSOD.2015.7292850

M3 - Conference article in proceedings

AN - SCOPUS:84959189149

SN - 9781479983797

SP - 117

EP - 118

BT - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD

PB - IEEE

T2 - International Conference on Numerical Simulation of Optoelectronic Devices

Y2 - 7 September 2015 through 11 September 2015

ER -

Diffusion-driven current transport to near-surface nanostructures

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Keywords

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