Determination of diffusion parameters and activation energy of diffusion in V3Si phase with A15 crystal structure

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Indian Institute of Science Bangalore

Abstract

Diffusion parameters, such as the integrated diffusion coefficient of the phase, the tracer diffusion coefficient of species at different temperatures and the activation energy for diffusion, are determined in V3Si phase with A15 crystal structure. The tracer diffusion coefficient of Si was found to be negligible compared to the tracer diffusion coefficient of V. The calculated diffusion parameters will help to validate the theoretical analysis of defect structure of the phase, which plays an important role in the superconductivity.

Details

Original languageEnglish
Pages (from-to)377-380
Number of pages4
JournalScripta Materialia
Volume60
Issue number6
Publication statusPublished - Mar 2009
MoE publication typeA1 Journal article-refereed

    Research areas

  • Interdiffusion, Intermetallic, Metal silicide, Superconductors, Tracer diffusion

ID: 3228380