Determination of defect content and defect profile in semiconductor heterostructures

  • A. Zubiaga
  • , J.A. Garcia
  • , F. Plazaola
  • , J. Zuñiga-Perez
  • , V. Muñoz-Sanjose

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)
Original languageEnglish
JournalJournal of Physics: Conference Series
Volume265
Issue number1
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

Keywords

  • defect profile
  • Positron annihilation spectroscopy
  • semiconductor heterostructure
  • vacancy defect
  • ZnO

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