Determination of crystal misorientation in epitaxial lateral overgrowth of GaN

W.M. Chen, P.J. McNally, K. Jacobs, T. Tuomi, A.N. Danilewsky, Z.R. Zytkiewicz, D. Lowney, J. Kanatharana, L. Knuuttila, J. Riikonen

    Research output: Contribution to journalArticleScientificpeer-review

    19 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)94-102
    JournalJournal of Crystal Growth
    Issue number243
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed

    Keywords

    • epitaxial lateral overgrowth
    • gallium nitride
    • sapphire
    • synchrotrron x-ray topography
    • wing tilt
    • x-ray rocking curve

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