Detection of mechanical resonance of a single-electron transistor by direct current

Yu.A. Pashkin, T.F. Li, Jukka P. Pekola, O. Astafiev, D.A. Knyazev, F. Hoehne, H. Im, Y. Nakamura, J.S. Tsai

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)
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Abstract

We have suspended an Al based single-electron transistor (SET) whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations in the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail.
Original languageEnglish
Article number263513
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume96
Issue number26
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

Keywords

  • direct current
  • mechanical resonance
  • single-electron transistor

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