Design of an 85-95-GHz differential amplifier in 28-nm CMOS FDSOI

Ali Vahdati, Mikko Varonen, Dristy Parveg, Denizhan Karaca, Kari A I Halonen

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

5 Citations (Scopus)

Abstract

This paper presents the design and measurement results of a W-band two-stage differential amplifier using transformers in 28-nm CMOS FDSOI. At 90 GHz, the amplifier achieves 13.8 dB gain, and the input and output return loss are -8.0 dB and -11 dB, repectively. The amplifier obtains +5 dBm saturated output power and 1-dB output compression point of 0 dBm at the centre frequency. From 85 to 95 GHz, the gain is better than 12.3 dB and the average noise figure (NF) is 8 dB. The design consumes 37.5 mW power from a 1-V supply and the active area of the design is 0.017 mm2.

Original languageEnglish
Title of host publication2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications
PublisherIEEE
Number of pages4
ISBN (Electronic)9781509013487
DOIs
Publication statusPublished - 27 Jun 2016
MoE publication typeA4 Article in a conference publication
Event9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications - Aalto University, Espoo, Finland
Duration: 6 Jun 20168 Jun 2016
http://gsmm2016.aalto.fi/

Publication series

NameGlobal Symposium on Milllimeter Waves
ISSN (Print)2380-9515

Conference

Conference9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications
Abbreviated titleGSMM
CountryFinland
CityEspoo
Period06/06/201608/06/2016
Internet address

Keywords

  • active circuits
  • amplifiers
  • CMOS FDSOI
  • millimetre-wave integrated circuits
  • transformers
  • W-band

Fingerprint

Dive into the research topics of 'Design of an 85-95-GHz differential amplifier in 28-nm CMOS FDSOI'. Together they form a unique fingerprint.

Cite this