Design of a D-Band CMOS Amplifier Utilizing Coupled Slow-Wave Coplanar Waveguides

Dristy Parveg, Mikko Varonen, Denizhan Karaca, Ali Vahdati, Mikko Kantanen, Kari A.I. Halonen

Research output: Contribution to journalArticleScientificpeer-review

16 Citations (Scopus)

Abstract

This paper validates a design and modeling methodology of coupled slow-wave waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that utilizes the CS-CPW for impedance matching. The robustness and feasibility of using the CS-CPW as a matching element in wideband millimeter-wave (mm-wave) silicon circuit designs are studied. Furthermore, the key design details of a mm-wave LNA are discussed. The designed monolithic microwave integrated circuit amplifier has a gain greater than 10 dB from 135 to 170 GHz with a peak gain of 15.7 dB at 160 GHz. The amplifier has a measured noise figure of 8.5 dB from 135 to 170 GHz, and an output-referred 1-dB compression point of -16.5 dBm at 160 GHz. The total power consumption of the amplifier is 32 mW.

Original languageEnglish
Pages (from-to)1359 - 1373
Number of pages15
JournalIEEE Transactions on Microwave Theory and Techniques
Volume66
Issue number3
Early online date14 Dec 2017
DOIs
Publication statusPublished - 2018
MoE publication typeA1 Journal article-refereed

Keywords

  • 140 GHz
  • 170 GHz
  • Amplifier
  • CMOS
  • CMOS technology
  • Coplanar waveguides
  • coupled slow-wave coplanar waveguide (CS-CPW)
  • coupled transmission lines
  • D-band
  • Impedance
  • low-noise amplifier (LNA)
  • Metals
  • millimeter wave integrated circuit
  • monolithic microwave integrated circuit (MMIC)
  • Silicon
  • silicon
  • slow-wave coplanar waveguide (S-CPW)
  • slow-wave coupled line
  • Strips
  • Substrates

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