Abstract
This paper validates a design and modeling methodology of coupled slow-wave waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that utilizes the CS-CPW for impedance matching. The robustness and feasibility of using the CS-CPW as a matching element in wideband millimeter-wave (mm-wave) silicon circuit designs are studied. Furthermore, the key design details of a mm-wave LNA are discussed. The designed monolithic microwave integrated circuit amplifier has a gain greater than 10 dB from 135 to 170 GHz with a peak gain of 15.7 dB at 160 GHz. The amplifier has a measured noise figure of 8.5 dB from 135 to 170 GHz, and an output-referred 1-dB compression point of -16.5 dBm at 160 GHz. The total power consumption of the amplifier is 32 mW.
| Original language | English |
|---|---|
| Pages (from-to) | 1359 - 1373 |
| Number of pages | 15 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 66 |
| Issue number | 3 |
| Early online date | 14 Dec 2017 |
| DOIs | |
| Publication status | Published - 2018 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- 140 GHz
- 170 GHz
- Amplifier
- CMOS
- CMOS technology
- Coplanar waveguides
- coupled slow-wave coplanar waveguide (CS-CPW)
- coupled transmission lines
- D-band
- Impedance
- low-noise amplifier (LNA)
- Metals
- millimeter wave integrated circuit
- monolithic microwave integrated circuit (MMIC)
- Silicon
- silicon
- slow-wave coplanar waveguide (S-CPW)
- slow-wave coupled line
- Strips
- Substrates