Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology

Md Najmussadat; Raju Ahamed; Mikko Varonen; Dristy Parveg; Yehia Tawfik; Kari A.I. Halonen

Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology

Md Najmussadat, Raju Ahamed, Mikko Varonen, Dristy Parveg, Yehia Tawfik, Kari A.I. Halonen

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

9 Citations (Scopus)

166 Downloads (Pure)

Abstract

In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3-dB bandwidth of 14 GHz. It shows a simulated noise figure of 13.7 dB at 240 GHz. The DC power consumption of this LNA is 97.2 mW with a supply voltage of 3V. This LNA so far represents the highest gain reported in SiGe BiCMOS technology around 240 GHz. The total chip area including the pads of this LNA is 0.45 mm2.

Original language	English
Title of host publication	EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
Publisher	IEEE
Pages	17-20
Number of pages	4
ISBN (Electronic)	978-2-87487-060-6
Publication status	Published - 10 Jan 2021
MoE publication type	A4 Conference publication
Event	European Microwave Integrated Circuits Conference - Utrecht, Netherlands Duration: 11 Jan 2021 → 12 Jan 2021 Conference number: 15

Conference

Conference	European Microwave Integrated Circuits Conference
Abbreviated title	EuMIC
Country/Territory	Netherlands
City	Utrecht
Period	11/01/2021 → 12/01/2021

Keywords

BiCMOS
Low Noise Amplifier (LNA)
millimeter-wave
MMIC
SiGe

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Najmussadat_Design_of_240-ghz_lna_bicmosAccepted author manuscript, 907 KB

https://ieeexplore.ieee.org/document/9337305

Cite this

@inproceedings{417eac5056654a33b6e0f5fdc7908fa5,

title = "Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology",

abstract = "In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3-dB bandwidth of 14 GHz. It shows a simulated noise figure of 13.7 dB at 240 GHz. The DC power consumption of this LNA is 97.2 mW with a supply voltage of 3V. This LNA so far represents the highest gain reported in SiGe BiCMOS technology around 240 GHz. The total chip area including the pads of this LNA is 0.45 mm2.",

keywords = "BiCMOS, Low Noise Amplifier (LNA), millimeter-wave, MMIC, SiGe",

author = "Md Najmussadat and Raju Ahamed and Mikko Varonen and Dristy Parveg and Yehia Tawfik and Halonen, {Kari A.I.}",

year = "2021",

month = jan,

day = "10",

language = "English",

pages = "17--20",

booktitle = "EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference",

publisher = "IEEE",

address = "United States",

note = "European Microwave Integrated Circuits Conference, EuMIC ; Conference date: 11-01-2021 Through 12-01-2021",

}

Najmussadat, M , Ahamed, R, Varonen, M, Parveg, D, Tawfik, Y & Halonen, KAI 2021, Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology. in EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference., 9337305, IEEE, pp. 17-20, European Microwave Integrated Circuits Conference, Utrecht, Netherlands, 11/01/2021. <https://ieeexplore.ieee.org/document/9337305>

TY - GEN

T1 - Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology

AU - Najmussadat, Md

AU - Ahamed, Raju

AU - Varonen, Mikko

AU - Parveg, Dristy

AU - Tawfik, Yehia

AU - Halonen, Kari A.I.

N1 - Conference code: 15

PY - 2021/1/10

Y1 - 2021/1/10

N2 - In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3-dB bandwidth of 14 GHz. It shows a simulated noise figure of 13.7 dB at 240 GHz. The DC power consumption of this LNA is 97.2 mW with a supply voltage of 3V. This LNA so far represents the highest gain reported in SiGe BiCMOS technology around 240 GHz. The total chip area including the pads of this LNA is 0.45 mm2.

AB - In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3-dB bandwidth of 14 GHz. It shows a simulated noise figure of 13.7 dB at 240 GHz. The DC power consumption of this LNA is 97.2 mW with a supply voltage of 3V. This LNA so far represents the highest gain reported in SiGe BiCMOS technology around 240 GHz. The total chip area including the pads of this LNA is 0.45 mm2.

KW - BiCMOS

KW - Low Noise Amplifier (LNA)

KW - millimeter-wave

KW - MMIC

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=85100913805&partnerID=8YFLogxK

M3 - Conference article in proceedings

AN - SCOPUS:85100913805

SP - 17

EP - 20

BT - EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference

PB - IEEE

T2 - European Microwave Integrated Circuits Conference

Y2 - 11 January 2021 through 12 January 2021

ER -

Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology

Abstract

Conference

Keywords

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Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Projects

TeraCom: Wafer Level Integrated THz Communication Link

MilliRAD: Compact Millimeter-wave Radiometers

Cite this