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In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3-dB bandwidth of 14 GHz. It shows a simulated noise figure of 13.7 dB at 240 GHz. The DC power consumption of this LNA is 97.2 mW with a supply voltage of 3V. This LNA so far represents the highest gain reported in SiGe BiCMOS technology around 240 GHz. The total chip area including the pads of this LNA is 0.45 mm2.
|Title of host publication||EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference|
|Number of pages||4|
|Publication status||Published - 10 Jan 2021|
|MoE publication type||A4 Article in a conference publication|
|Event||European Microwave Integrated Circuits Conference - Utrecht, Netherlands|
Duration: 11 Jan 2021 → 12 Jan 2021
Conference number: 15
|Conference||European Microwave Integrated Circuits Conference|
|Period||11/01/2021 → 12/01/2021|
- Low Noise Amplifier (LNA)
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