Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology

Raju Ahamed; Mikko Varonen; Dristy Parveg; Md Najmussadat; Mikko Kantanen; Kari A.I. Halonen

doi:10.1109/ISCAS45731.2020.9181170

Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology

Raju Ahamed^*, Mikko Varonen, Dristy Parveg, Md Najmussadat, Mikko Kantanen, Kari A.I. Halonen

^*Corresponding author for this work

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

7 Citations (Scopus)

201 Downloads (Pure)

Abstract

This paper presents a high dynamic range E-band power detector in a 0.13 µm SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor is adopted and implemented for E-band operation. The measured detector achieves a dynamic range of 35 dB from -25 dBm to +10 dBm. It shows less than 1.6 dB offset in input power detection from 72 GHz to 82 GHz. This power detector consumes 0.6 mW of DC power and the occupied core area is 0.1 mm²

Original language	English
Title of host publication	2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings
Publisher	IEEE
ISBN (Electronic)	978-1-7281-3320-1
DOIs	https://doi.org/10.1109/ISCAS45731.2020.9181170
Publication status	Published - 2020
MoE publication type	A4 Conference publication
Event	IEEE International Symposium on Circuits and Systems - Seville, Spain Duration: 10 Oct 2020 → 21 Oct 2020

Publication series

Name	IEEE International Symposium on Circuits and Systems proceedings
ISSN (Print)	0271-4302
ISSN (Electronic)	2158-1525

Conference

Conference	IEEE International Symposium on Circuits and Systems
Abbreviated title	ISCAS
Country/Territory	Spain
City	Seville
Period	10/10/2020 → 21/10/2020

Keywords

BiCMOS
E-band
Heterojunction bipolar transistor (HBT)
Millimeter-wave
MMIC
Power detector

Access to Document

10.1109/ISCAS45731.2020.9181170

ELEC_Raju_Design_and_analysisFinal published version, 1.64 MB

Cite this

Ahamed, R., Varonen, M., Parveg, D., Najmussadat, M., Kantanen, M., & Halonen, K. A. I. (2020). Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology. In 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings Article 9181170 (IEEE International Symposium on Circuits and Systems proceedings). IEEE. https://doi.org/10.1109/ISCAS45731.2020.9181170

@inproceedings{9d75320cbb9f4e1084577229d220d384,

title = "Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology",

abstract = "This paper presents a high dynamic range E-band power detector in a 0.13 µm SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor is adopted and implemented for E-band operation. The measured detector achieves a dynamic range of 35 dB from -25 dBm to +10 dBm. It shows less than 1.6 dB offset in input power detection from 72 GHz to 82 GHz. This power detector consumes 0.6 mW of DC power and the occupied core area is 0.1 mm2",

keywords = "BiCMOS, E-band, Heterojunction bipolar transistor (HBT), Millimeter-wave, MMIC, Power detector",

author = "Raju Ahamed and Mikko Varonen and Dristy Parveg and Md Najmussadat and Mikko Kantanen and Halonen, {Kari A.I.}",

note = "Funding Information: The authors would like to thank the Academy of Finland for supporting this work through MilliRAD project. The work of M. Varonen was supported through the Academy of Finland Research Fellow project MIDERI (decision no 310234). Publisher Copyright: {\textcopyright} 2020 IEEE; IEEE International Symposium on Circuits and Systems, ISCAS ; Conference date: 10-10-2020 Through 21-10-2020",

year = "2020",

doi = "10.1109/ISCAS45731.2020.9181170",

language = "English",

series = "IEEE International Symposium on Circuits and Systems proceedings",

publisher = "IEEE",

booktitle = "2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings",

address = "United States",

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Ahamed, R, Varonen, M, Parveg, D, Najmussadat, M, Kantanen, M & Halonen, KAI 2020, Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology. in 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings., 9181170, IEEE International Symposium on Circuits and Systems proceedings, IEEE, IEEE International Symposium on Circuits and Systems, Seville, Spain, 10/10/2020. https://doi.org/10.1109/ISCAS45731.2020.9181170

Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology. / Ahamed, Raju; Varonen, Mikko; Parveg, Dristy et al.
2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings. IEEE, 2020. 9181170 (IEEE International Symposium on Circuits and Systems proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology

AU - Ahamed, Raju

AU - Varonen, Mikko

AU - Parveg, Dristy

AU - Najmussadat, Md

AU - Kantanen, Mikko

AU - Halonen, Kari A.I.

N1 - Funding Information: The authors would like to thank the Academy of Finland for supporting this work through MilliRAD project. The work of M. Varonen was supported through the Academy of Finland Research Fellow project MIDERI (decision no 310234). Publisher Copyright: © 2020 IEEE

PY - 2020

Y1 - 2020

N2 - This paper presents a high dynamic range E-band power detector in a 0.13 µm SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor is adopted and implemented for E-band operation. The measured detector achieves a dynamic range of 35 dB from -25 dBm to +10 dBm. It shows less than 1.6 dB offset in input power detection from 72 GHz to 82 GHz. This power detector consumes 0.6 mW of DC power and the occupied core area is 0.1 mm2

AB - This paper presents a high dynamic range E-band power detector in a 0.13 µm SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor is adopted and implemented for E-band operation. The measured detector achieves a dynamic range of 35 dB from -25 dBm to +10 dBm. It shows less than 1.6 dB offset in input power detection from 72 GHz to 82 GHz. This power detector consumes 0.6 mW of DC power and the occupied core area is 0.1 mm2

KW - BiCMOS

KW - E-band

KW - Heterojunction bipolar transistor (HBT)

KW - Millimeter-wave

KW - MMIC

KW - Power detector

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M3 - Conference article in proceedings

AN - SCOPUS:85109261114

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BT - 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings

PB - IEEE

T2 - IEEE International Symposium on Circuits and Systems

Y2 - 10 October 2020 through 21 October 2020

ER -

Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology

Abstract

Publication series

Conference

Keywords

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MilliRAD: Compact Millimeter-wave Radiometers

Cite this

Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Projects

MilliRAD: Compact Millimeter-wave Radiometers

Cite this