Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology

Raju Ahamed*, Mikko Varonen, Dristy Parveg, Md Najmussadat, Mikko Kantanen, Kari A.I. Halonen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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Abstract

This paper presents a high dynamic range E-band power detector in a 0.13 µm SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor is adopted and implemented for E-band operation. The measured detector achieves a dynamic range of 35 dB from -25 dBm to +10 dBm. It shows less than 1.6 dB offset in input power detection from 72 GHz to 82 GHz. This power detector consumes 0.6 mW of DC power and the occupied core area is 0.1 mm2

Original languageEnglish
Title of host publication2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings
PublisherIEEE
ISBN (Electronic)9781728133201
DOIs
Publication statusPublished - 2020
MoE publication typeA4 Article in a conference publication
EventIEEE International Symposium on Circuits and Systems - Seville, Spain
Duration: 10 Oct 202021 Oct 2020

Publication series

NameIEEE International Symposium on Circuits and Systems proceedings
ISSN (Print)0271-4302
ISSN (Electronic)2158-1525

Conference

ConferenceIEEE International Symposium on Circuits and Systems
Abbreviated titleISCAS
CountrySpain
CitySeville
Period10/10/202021/10/2020

Keywords

  • BiCMOS
  • E-band
  • Heterojunction bipolar transistor (HBT)
  • Millimeter-wave
  • MMIC
  • Power detector

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