Depth and profile control in plasma etched MEMS structures

J. Kiihamäki; H. Kattelus; J. Karttunen; S. Franssila

Depth and profile control in plasma etched MEMS structures

J. Kiihamäki, H. Kattelus, J. Karttunen, S. Franssila

School services, ELEC

Research output: Contribution to journal › Article › Scientific › peer-review

23 Citations (Scopus)

Original language	English
Pages (from-to)	234-238
Journal	Sensors and Actuators
Volume	82
Publication status	Published - 2000
MoE publication type	A1 Journal article-refereed

Keywords

ARDE
etching
ICP
loading
plasma
RIE-lag.
silicon

Cite this

@article{b4b080147421496bbedbbd1bf820ed15,

title = "Depth and profile control in plasma etched MEMS structures",

keywords = "ARDE, etching, ICP, loading, plasma, RIE-lag., silicon, ARDE, etching, ICP, loading, plasma, RIE-lag., silicon, ARDE, etching, ICP, loading, plasma, RIE-lag., silicon",

author = "J. Kiiham{\"a}ki and H. Kattelus and J. Karttunen and S. Franssila",

year = "2000",

language = "English",

volume = "82",

pages = "234--238",

journal = "Sensors and Actuators",

}

TY - JOUR

T1 - Depth and profile control in plasma etched MEMS structures

AU - Kiihamäki, J.

AU - Kattelus, H.

AU - Karttunen, J.

AU - Franssila, S.

PY - 2000

Y1 - 2000

KW - ARDE

KW - etching

KW - ICP

KW - loading

KW - plasma

KW - RIE-lag.

KW - silicon

KW - ARDE

KW - etching

KW - ICP

KW - loading

KW - plasma

KW - RIE-lag.

KW - silicon

KW - ARDE

KW - etching

KW - ICP

KW - loading

KW - plasma

KW - RIE-lag.

KW - silicon

M3 - Article

VL - 82

SP - 234

EP - 238

JO - Sensors and Actuators

JF - Sensors and Actuators

ER -