Deposition of tin oxide into porous silicon by atomic layer epitaxy

Research output: Contribution to journalArticleScientificpeer-review


  • C. Ducsö
  • N. Khanh
  • Z. Horvath
  • I. Barsony
  • M. Utriainen
  • S. Lehto
  • M. Nieminen
  • L. Niinistö

Research units


Original languageEnglish
Pages (from-to)683-687
JournalJournal of the Electrochemical Society
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

    Research areas

  • atomic layer epitaxy, rbs, sims, tem, tin oxide

ID: 4860295