Dependence of the Anisotropy of Wet Chemical Etching of Silicon on the Amount of Surface Coverage by OH Radicals

Miguel A. Gosálvez, Adam S. Foster, Risto M. Nieminen

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)
Original languageEnglish
Pages (from-to)53-65
Number of pages13
JournalSensors and Materials
Issue number2
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed


  • anisotropic etching
  • atomistic simulation
  • cellular automaton
  • convex corner
  • pit nucleation
  • step propagation
  • surface coverage

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