Demonstration of a 0.325-THz CMOS amplifier

Dristy Parveg; Denizhan Karaca; Mikko Varonen; Ali Vahdati; Kari A I Halonen

doi:10.1109/GSMM.2016.7500295

Demonstration of a 0.325-THz CMOS amplifier

Dristy Parveg, Denizhan Karaca, Mikko Varonen, Ali Vahdati, Kari A I Halonen

Kari Halonen Group

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

Abstract

This paper presents a 0.325-THz single-ended amplifier designed in a 28-nm FDSOI CMOS technology. The amplifier consists of four common-source gain stages and utilizes staggered-tuning along with inductive feedback (drain to gate) technique to boost up the gain over a wide frequency band. Having a total power consumption of 28 mW, the amplifier achieves a peak gain of 4.5 dB at 325 GHz. To the best of authors' knowledge, this is the highest operation frequency demonstrated for a silicon amplifier up to date.

Original language	English
Title of host publication	2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications
Publisher	IEEE
Number of pages	3
ISBN (Electronic)	9781509013487
DOIs	https://doi.org/10.1109/GSMM.2016.7500295
Publication status	Published - 27 Jun 2016
MoE publication type	A4 Article in a conference publication
Event	9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications - Aalto University, Espoo, Finland Duration: 6 Jun 2016 → 8 Jun 2016 http://gsmm2016.aalto.fi/

Publication series

Name	Global Symposium on Milllimeter Waves
ISSN (Print)	2380-9515

Conference

Conference	9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications
Abbreviated title	GSMM
Country	Finland
City	Espoo
Period	06/06/2016 → 08/06/2016
Internet address	http://gsmm2016.aalto.fi/

Keywords

amplifier
CMOS
millimeter-wave circuits
MMICs
neutralization
terahertz (THz)

Access to Document

10.1109/GSMM.2016.7500295

Link to publication in Scopus

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Cite this

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title = "Demonstration of a 0.325-THz CMOS amplifier",

abstract = "This paper presents a 0.325-THz single-ended amplifier designed in a 28-nm FDSOI CMOS technology. The amplifier consists of four common-source gain stages and utilizes staggered-tuning along with inductive feedback (drain to gate) technique to boost up the gain over a wide frequency band. Having a total power consumption of 28 mW, the amplifier achieves a peak gain of 4.5 dB at 325 GHz. To the best of authors' knowledge, this is the highest operation frequency demonstrated for a silicon amplifier up to date.",

keywords = "amplifier, CMOS, millimeter-wave circuits, MMICs, neutralization, terahertz (THz)",

author = "Dristy Parveg and Denizhan Karaca and Mikko Varonen and Ali Vahdati and Halonen, {Kari A I}",

year = "2016",

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note = "9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications, GSMM ; Conference date: 06-06-2016 Through 08-06-2016",

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Parveg, D, Karaca, D, Varonen, M, Vahdati, A & Halonen, KAI 2016, Demonstration of a 0.325-THz CMOS amplifier. in 2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications., 7500295, Global Symposium on Milllimeter Waves, IEEE, 9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications, Espoo, Finland, 06/06/2016. https://doi.org/10.1109/GSMM.2016.7500295

Demonstration of a 0.325-THz CMOS amplifier. / Parveg, Dristy; Karaca, Denizhan; Varonen, Mikko; Vahdati, Ali; Halonen, Kari A I.

2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications. IEEE, 2016. 7500295 (Global Symposium on Milllimeter Waves).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

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