Demonstration of a 0.325-THz CMOS amplifier

Dristy Parveg, Denizhan Karaca, Mikko Varonen, Ali Vahdati, Kari A I Halonen

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

2 Citations (Scopus)

Abstract

This paper presents a 0.325-THz single-ended amplifier designed in a 28-nm FDSOI CMOS technology. The amplifier consists of four common-source gain stages and utilizes staggered-tuning along with inductive feedback (drain to gate) technique to boost up the gain over a wide frequency band. Having a total power consumption of 28 mW, the amplifier achieves a peak gain of 4.5 dB at 325 GHz. To the best of authors' knowledge, this is the highest operation frequency demonstrated for a silicon amplifier up to date.

Original languageEnglish
Title of host publication2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications
PublisherIEEE
Number of pages3
ISBN (Electronic)9781509013487
DOIs
Publication statusPublished - 27 Jun 2016
MoE publication typeA4 Article in a conference publication
Event9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications - Aalto University, Espoo, Finland
Duration: 6 Jun 20168 Jun 2016
http://gsmm2016.aalto.fi/

Publication series

NameGlobal Symposium on Milllimeter Waves
ISSN (Print)2380-9515

Conference

Conference9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications
Abbreviated titleGSMM
CountryFinland
CityEspoo
Period06/06/201608/06/2016
Internet address

Keywords

  • amplifier
  • CMOS
  • millimeter-wave circuits
  • MMICs
  • neutralization
  • terahertz (THz)

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