Delta-doped epitaxial La:SrTiO3 field-effect transistor

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@article{95f504599d2149b5acfaa7e5e55a5667,

title = "Delta-doped epitaxial La:SrTiO3 field-effect transistor",

author = "K. Nishio and Mikko Matvejeff and R. Takahashi and M. Lippmaa and M. Sumiya and H. Yoshikawa and K. Kobayashi and Y. Yamashita",

year = "2011",

doi = "10.1063/1.3600782",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Delta-doped epitaxial La:SrTiO3 field-effect transistor

AU - Nishio, K.

AU - Matvejeff, Mikko

AU - Takahashi, R.

AU - Lippmaa, M.

AU - Sumiya, M.

AU - Yoshikawa, H.

AU - Kobayashi, K.

AU - Yamashita, Y.

PY - 2011

Y1 - 2011

U2 - 10.1063/1.3600782

DO - 10.1063/1.3600782

M3 - Article

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -