Defects in semiconductors: recent progress in positron experiments

P. Hautojärvi

Defects in semiconductors: recent progress in positron experiments

P. Hautojärvi

Department of Computer Science

Research output: Contribution to journal › Article › Scientific › peer-review

64 Citations (Scopus)

Original language	English
Pages (from-to)	47-48
Journal	Materials Science Forum
Volume	175-178
Publication status	Published - 1995
MoE publication type	A1 Journal article-refereed

Keywords

defects
positron annihilation
semiconductor

Cite this

@article{5d7b8d10ebe34021992b95f35b852540,

title = "Defects in semiconductors: recent progress in positron experiments",

keywords = "defects, positron annihilation, semiconductor, defects, positron annihilation, semiconductor, defects, positron annihilation, semiconductor",

author = "P. Hautoj{\"a}rvi",

year = "1995",

language = "English",

volume = "175-178",

pages = "47--48",

journal = "Materials Science Forum",

issn = "1662-9760",

publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Defects in semiconductors: recent progress in positron experiments

AU - Hautojärvi, P.

PY - 1995

Y1 - 1995

KW - defects

KW - positron annihilation

KW - semiconductor

KW - defects

KW - positron annihilation

KW - semiconductor

KW - defects

KW - positron annihilation

KW - semiconductor

M3 - Article

SN - 1662-9760

VL - 175-178

SP - 47

EP - 48

JO - Materials Science Forum

JF - Materials Science Forum

ER -