Defects in Semi-insulating Gallium Arsenide Grown by Liquid Encapsulated Czochralski and Vertical Gradient Freeze Techniques

M. Tuominen; E. Prieur; T. Tuomi; M. Karilahti; T. Koljonen; M. Tilli

Defects in Semi-insulating Gallium Arsenide Grown by Liquid Encapsulated Czochralski and Vertical Gradient Freeze Techniques

M. Tuominen, E. Prieur, T. Tuomi, M. Karilahti, T. Koljonen, M. Tilli

Research output: Working paper › Professional

Original language	English
Place of Publication	Germany
Pages	547-548
Publication status	Published - 1994
MoE publication type	D4 Published development or research report or study

Publication series

Name	Hasylab Jahresbericht 1993
Publisher	Hasylab

Keywords

synchrotron x-ray topography, gallium arsenide

Cite this

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title = "Defects in Semi-insulating Gallium Arsenide Grown by Liquid Encapsulated Czochralski and Vertical Gradient Freeze Techniques",

keywords = "synchrotron x-ray topography, gallium arsenide, synchrotron x-ray topography, gallium arsenide, synchrotron x-ray topography, gallium arsenide",

author = "M. Tuominen and E. Prieur and T. Tuomi and M. Karilahti and T. Koljonen and M. Tilli",

year = "1994",

language = "English",

series = "Hasylab Jahresbericht 1993",

publisher = "Hasylab",

pages = "547--548",

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AU - Tuomi, T.

AU - Karilahti, M.

AU - Koljonen, T.

AU - Tilli, M.

PY - 1994

Y1 - 1994

KW - synchrotron x-ray topography, gallium arsenide

M3 - Working paper

T3 - Hasylab Jahresbericht 1993

SP - 547

EP - 548

BT - Defects in Semi-insulating Gallium Arsenide Grown by Liquid Encapsulated Czochralski and Vertical Gradient Freeze Techniques

CY - Germany

ER -