Defects in semi-insulating gallium arsenide grown by liquid encapsulated Czochralski and vertical gradient freeze techniques

E. Prieur, M. Karilahti, T. Koljonen, T. Tuomi, M. Tuominen, M. Tilli

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationEspoo
    Pages50-51
    Publication statusPublished - 1994
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameOptoelectronics Laboratory, Annual Report 1993
    PublisherTKK
    No.TKK-F-C160

    Keywords

    • synchrotron x-ray topography, defects, gallium arsenide

    Cite this