Defects in nitrides, positron annihilation spectroscopy

Filip Tuomisto*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

108 Downloads (Pure)

Abstract

In-grown group III (cation) vacancies (VGa, VAl, VIn) in GaN, AlN and InN tend to be complexed with donor-type defects These donor defects may in principle be residual impurities such as O or H, n-type dopants such as Si, or intrinsic defects such as the N vacancy (VN). The cation vacancies and their complexes are generally deep acceptors, and hence they compensate for the n-type conductivity and add to the scattering centers limiting the carrier mobility in these materials. Mg doping reduces the group III vacancy concentrations, but other kinds of vacancy defects emerge. This work presents results obtained with positron annihilation spectroscopy in GaN, AlN, and InN. The vacancy-donor complexes are different in these three materials, and their importance in determining the opto-electronic properties of the material varies as well. The formation of these defects is discussed in the light of the differences in the growth methods.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices VIII
EditorsJen-Inn Chyi, Yasushi Nanishi, Hadis Morkoc, Joachim Piprek, Euijoon Yoon, Hiroshi Fujioka
Pages1-10
Number of pages10
DOIs
Publication statusPublished - 2013
MoE publication typeA4 Article in a conference publication
EventSymposium on Gallium Nitride Materials and Devices - San Francisco, United States
Duration: 4 Feb 20137 Feb 2013
Conference number: VIII

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume8625
ISSN (Print)0277-786X

Conference

ConferenceSymposium on Gallium Nitride Materials and Devices
CountryUnited States
CitySan Francisco
Period04/02/201307/02/2013

Keywords

  • AlN
  • Defect
  • GaN
  • InN
  • Positron
  • Vacancy

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