Defects in MBE GaAs grown at low temperatures: stoichiometry, doping and deactivation of n-type conductivity

T. Laine, K. Saarinen, P. Hautojärvi, C. Corbel, M. Missous

Research output: Contribution to journal › Article › Scientific › peer-review

Cite this

@article{e1fd159d5d6f49fa8cbc05fa372b0b32,

title = "Defects in MBE GaAs grown at low temperatures: stoichiometry, doping and deactivation of n-type conductivity",

author = "T. Laine and K. Saarinen and P. Hautoj{\"a}rvi and C. Corbel and M. Missous",

year = "1999",

language = "English",

volume = "86",

pages = "1888",

journal = "Journal of Applied Physics",

issn = "1089-7550",

publisher = "American Institute of Physics",

}