Defects in III-V semiconductors grown from metallic solution.

T. Tuomi; A.N. Danilewsky; P. McNally

Defects in III-V semiconductors grown from metallic solution.

T. Tuomi, A.N. Danilewsky, P. McNally

Research output: Working paper › Professional

Original language	English
Place of Publication	Germany
Pages	881-882
Publication status	Published - 1995
MoE publication type	D4 Published development or research report or study

Keywords

semiconductors, synchrotron X-ray topography

Cite this

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title = "Defects in III-V semiconductors grown from metallic solution.",

keywords = "semiconductors, synchrotron X-ray topography, semiconductors, synchrotron X-ray topography, semiconductors, synchrotron X-ray topography",

author = "T. Tuomi and A.N. Danilewsky and P. McNally",

year = "1995",

language = "English",

pages = "881--882",

type = "WorkingPaper",

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T1 - Defects in III-V semiconductors grown from metallic solution.

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AU - Danilewsky, A.N.

AU - McNally, P.

PY - 1995

Y1 - 1995

KW - semiconductors, synchrotron X-ray topography

M3 - Working paper

SP - 881

EP - 882

BT - Defects in III-V semiconductors grown from metallic solution.

CY - Germany

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