Defect structure of a free standing GaN wafer grown by the ammonothermal method

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • SixPoint Materials Inc.

Details

Original languageEnglish
Pages (from-to)72-77
Number of pages6
JournalJournal of Crystal Growth
Volume406
Publication statusPublished - 15 Nov 2014
MoE publication typeA1 Journal article-refereed

    Research areas

  • Defects, Growth from solutions, Nitrides, Single crystal growth, X-ray diffraction, X-ray topography

ID: 750109