Original language | English |
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Pages (from-to) | 8368-8379 |
Journal | Journal of Applied Physics |
Volume | 87 |
Publication status | Published - 2000 |
MoE publication type | A1 Journal article-refereed |
Defect identification in GaAs grown at low temperatures by positron annihilation
J. Gebauer, F. Börmer, R. Krause-Rehberg, T.E.M. Staab, W. Bauer-Kugelmann, G. Küelgel, W. Trifshäser, P. Specht, R. Lutz, E.R. Weber, M. Luysberg
Research output: Contribution to journal › Article › Scientific › peer-review
38
Citations
(Scopus)