Defect formation and annealing behavior of InP implanted by low energy 15N ions

Eero Rauhala; Tommy Ahlgren; Kyösti Väkeväinen; J. Räisänen; J. Keinonen; Kimmo Saarinen; T. Laine; Jari Likonen

Defect formation and annealing behavior of InP implanted by low energy 15N ions

Eero Rauhala, Tommy Ahlgren, Kyösti Väkeväinen, J. Räisänen, J. Keinonen, Kimmo Saarinen, T. Laine, Jari Likonen

Department of Applied Physics

Research output: Contribution to journal › Article › Scientific › peer-review

11 Citations (Scopus)

Original language	English
Journal	Journal of Applied Physics
Volume	83
Publication status	Published - 1998
MoE publication type	A1 Journal article-refereed

Cite this

@article{43feb4958976453a9b6682404e38d117,

title = "Defect formation and annealing behavior of InP implanted by low energy 15N ions",

author = "Eero Rauhala and Tommy Ahlgren and Ky{\"o}sti V{\"a}kev{\"a}inen and J. R{\"a}is{\"a}nen and J. Keinonen and Kimmo Saarinen and T. Laine and Jari Likonen",

year = "1998",

language = "English",

volume = "83",

journal = "Journal of Applied Physics",

issn = "1089-7550",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Defect formation and annealing behavior of InP implanted by low energy 15N ions

AU - Rauhala, Eero

AU - Ahlgren, Tommy

AU - Väkeväinen, Kyösti

AU - Räisänen, J.

AU - Keinonen, J.

AU - Saarinen, Kimmo

AU - Laine, T.

AU - Likonen, Jari

PY - 1998

Y1 - 1998

M3 - Article

SN - 1089-7550

VL - 83

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -