Defect evolution in 4H-SiC sublimation epi-layers grown on LPE buffers with reduced micropipe density

S. Hasenöhrl, R. Kudela, J. Novak, T.O. Tuomi, L. Knuuttila

    Research output: Contribution to journalArticleScientificpeer-review

    Original languageEnglish
    Pages (from-to)00-00
    JournalMaterials Research Society Symposium Proceedings
    Issue number00
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed

    Keywords

    • semiconductors
    • synchrotron X-ray topography

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