Defect evolution and interplay in n-type InN

C. Rauch, F. Tuomisto, A. Vilalta-Clemente, B. Lacroix, P. Ruterana, S. Kraeusel, B. Hourahine, W.J. Schaff

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)
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Abstract

The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.
Original languageEnglish
Article number091907
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume100
Issue number9
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

Keywords

  • dislocations
  • InN
  • positron annihilation
  • TEM
  • vacancies

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