Defect characterization of heavily As and P doped Si epilayers

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • STMicroelectronics Crolles

Details

Original languageEnglish
Pages (from-to)2537-2539
Number of pages3
JournalPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS
Volume6
Issue number11
Publication statusPublished - Nov 2009
MoE publication typeA1 Journal article-refereed

    Research areas

  • group V dopants, heavy doping, positrons, Si

ID: 3379875