Cycloheptatrienyl-cyclopentadienyl heteroleptic precursors for atomic layer deposition of group 4 oxide thin films

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Cycloheptatrienyl-cyclopentadienyl heteroleptic precursors for atomic layer deposition of group 4 oxide thin films. / Niinistö, Jaakko; Hatanpää, Timo; Kariniemi, Maarit; Mäntymäki, Miia; Costelle, Leila; Mizohata, Kenichiro; Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku.

In: Chemistry of Materials, Vol. 24, No. 11, 12.06.2012, p. 2002-2008.

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Niinistö, J, Hatanpää, T, Kariniemi, M, Mäntymäki, M, Costelle, L, Mizohata, K, Kukli, K, Ritala, M & Leskelä, M 2012, 'Cycloheptatrienyl-cyclopentadienyl heteroleptic precursors for atomic layer deposition of group 4 oxide thin films', Chemistry of Materials, vol. 24, no. 11, pp. 2002-2008. https://doi.org/10.1021/cm2030735

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Niinistö, Jaakko ; Hatanpää, Timo ; Kariniemi, Maarit ; Mäntymäki, Miia ; Costelle, Leila ; Mizohata, Kenichiro ; Kukli, Kaupo ; Ritala, Mikko ; Leskelä, Markku. / Cycloheptatrienyl-cyclopentadienyl heteroleptic precursors for atomic layer deposition of group 4 oxide thin films. In: Chemistry of Materials. 2012 ; Vol. 24, No. 11. pp. 2002-2008.

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@article{e568f22eaf0f4788a5e82e4f5144b6ff,
title = "Cycloheptatrienyl-cyclopentadienyl heteroleptic precursors for atomic layer deposition of group 4 oxide thin films",
abstract = "Atomic layer deposition (ALD) processes for the growth of ZrO 2 and TiO 2 were developed using novel precursors. The novel processes were based on cycloheptatrienyl (CHT, -C 7H 7) - cyclopentadienyl (Cp, -C 5H 5) compounds of Zr and Ti, offering improved thermal stability and purity of the deposited oxide films. The Cp MeZrCHT/O 3 ALD process yielded high growth rate (0.7-0.8 {\AA}/cycle) over a wide growth temperature range (300-450 °C) and diminutive impurity levels in the deposited polycrystalline films. Growth temperatures exceeding 400 °C caused partial decomposition of the precursor. Low capacitance equivalent thickness (0.8 nm) with low leakage current density was achieved. In the case of Ti, the novel precursor, namely CpTiCHT, together with ozone as the oxygen source yielded films with low impurity levels and a strong tendency to form the desired rutile phase upon annealing at rather low temperatures. In addition, the thermal stability of the CpTiCHT precursor is higher compared to the usually applied ALD precursors of Ti. The introduction of this new ALD precursor family offers a basis for further improving the ALD processes of group 4 oxide containing thin films for a wide range of applications.",
keywords = "ALD, atomic layer deposition, cycloheptatrienyl, cyclopentadienyl, high-k dielectrics, TiO, ZrO",
author = "Jaakko Niinist{\"o} and Timo Hatanp{\"a}{\"a} and Maarit Kariniemi and Miia M{\"a}ntym{\"a}ki and Leila Costelle and Kenichiro Mizohata and Kaupo Kukli and Mikko Ritala and Markku Leskel{\"a}",
year = "2012",
month = "6",
day = "12",
doi = "10.1021/cm2030735",
language = "English",
volume = "24",
pages = "2002--2008",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "AMERICAN CHEMICAL SOCIETY",
number = "11",

}

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TY - JOUR

T1 - Cycloheptatrienyl-cyclopentadienyl heteroleptic precursors for atomic layer deposition of group 4 oxide thin films

AU - Niinistö, Jaakko

AU - Hatanpää, Timo

AU - Kariniemi, Maarit

AU - Mäntymäki, Miia

AU - Costelle, Leila

AU - Mizohata, Kenichiro

AU - Kukli, Kaupo

AU - Ritala, Mikko

AU - Leskelä, Markku

PY - 2012/6/12

Y1 - 2012/6/12

N2 - Atomic layer deposition (ALD) processes for the growth of ZrO 2 and TiO 2 were developed using novel precursors. The novel processes were based on cycloheptatrienyl (CHT, -C 7H 7) - cyclopentadienyl (Cp, -C 5H 5) compounds of Zr and Ti, offering improved thermal stability and purity of the deposited oxide films. The Cp MeZrCHT/O 3 ALD process yielded high growth rate (0.7-0.8 Å/cycle) over a wide growth temperature range (300-450 °C) and diminutive impurity levels in the deposited polycrystalline films. Growth temperatures exceeding 400 °C caused partial decomposition of the precursor. Low capacitance equivalent thickness (0.8 nm) with low leakage current density was achieved. In the case of Ti, the novel precursor, namely CpTiCHT, together with ozone as the oxygen source yielded films with low impurity levels and a strong tendency to form the desired rutile phase upon annealing at rather low temperatures. In addition, the thermal stability of the CpTiCHT precursor is higher compared to the usually applied ALD precursors of Ti. The introduction of this new ALD precursor family offers a basis for further improving the ALD processes of group 4 oxide containing thin films for a wide range of applications.

AB - Atomic layer deposition (ALD) processes for the growth of ZrO 2 and TiO 2 were developed using novel precursors. The novel processes were based on cycloheptatrienyl (CHT, -C 7H 7) - cyclopentadienyl (Cp, -C 5H 5) compounds of Zr and Ti, offering improved thermal stability and purity of the deposited oxide films. The Cp MeZrCHT/O 3 ALD process yielded high growth rate (0.7-0.8 Å/cycle) over a wide growth temperature range (300-450 °C) and diminutive impurity levels in the deposited polycrystalline films. Growth temperatures exceeding 400 °C caused partial decomposition of the precursor. Low capacitance equivalent thickness (0.8 nm) with low leakage current density was achieved. In the case of Ti, the novel precursor, namely CpTiCHT, together with ozone as the oxygen source yielded films with low impurity levels and a strong tendency to form the desired rutile phase upon annealing at rather low temperatures. In addition, the thermal stability of the CpTiCHT precursor is higher compared to the usually applied ALD precursors of Ti. The introduction of this new ALD precursor family offers a basis for further improving the ALD processes of group 4 oxide containing thin films for a wide range of applications.

KW - ALD

KW - atomic layer deposition

KW - cycloheptatrienyl

KW - cyclopentadienyl

KW - high-k dielectrics

KW - TiO

KW - ZrO

UR - http://www.scopus.com/inward/record.url?scp=84862161433&partnerID=8YFLogxK

U2 - 10.1021/cm2030735

DO - 10.1021/cm2030735

M3 - Article

VL - 24

SP - 2002

EP - 2008

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 11

ER -

ID: 28853317