CVD growth of single-walled B-doped carbon nanotubes

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Abstract

Chemical Vapor Deposition is a method widely used in the synthesis of carbon nanotubes of one and multiple walls. However, the interdependent parameters playing a role in this synthesis approach are scarcely explored when single‐walled doped carbon nanotubes are the aimed product. It is well known that one method of tailoring the electronic properties of single wall carbon nanotubes is the chemical modification through incorporation of heteroatoms within the tube walls. We describe here the feasibility to use chemical vapor deposition employing high vacuum conditions and a one liquid precursor acting as B and C feedstock simultaneously. TEM exhibits small nanotube bundles containing 3 to 5 tubes with a narrow diameter distribution in relation to nanotube material produced with this method (0.9 to 1.5 nm). The boron content was probed by x‐ray photoelectron spectroscopy as bulk probing method in samples with high nanotube yield. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Original languageEnglish
Pages (from-to)1935-1938
JournalPhysica Status Solidi
Volume245
Issue number10
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed

    Research areas

  • 61.46.Fg, 68.37.Lp, 78.30.Na, 81.07.De, 81.15.Gh, 82.80.Pv

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