Current Spreading in Back-Contacted GaInP/GaAs Light-Emitting Diodes

Antti Myllynen, Toufik Sadi*, Jani Oksanen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)
185 Downloads (Pure)


The recently proposed diffusion-driven charge transport (DDCT) method can allow a paradigm shift in the design of optoelectronic devices, by changing both the current injection principle and the device structure. The DDCT injection technique is based on the bipolar electron and hole diffusion currents that are used to electrically inject charge carriers into an active region (AR) located outside the p-n junction. In this article, we study an interdigitated back-contacted DDCT-light-emitting diode (LED) based on a GaInP/GaAs double heterojunction (DHJ) structure consisting of lateral heterojunctions (LHJs) located above a uniform AR. The structure uses single-sided electrical injection and is suitable for large-area applications and thin-film devices with near-surface ARs. Our analysis, based on charge transport simulations, suggests that the structure permits more efficient current spreading and lower surface recombination than conventional structures, leading to a very high internal quantum efficiency (IQE) and injection efficiency exceeding 99%. Particularly, we investigate the implications of using the new structure for improving the efficiency of LEDs, bringing them closer to the threshold of electroluminescent cooling (ELC). The results predict an above-unity internal power conversion efficiency for the DDCT-LEDs, substantially exceeding the efficiency of conventional reference devices, highlighting the new possibilities that DDCT devices offer especially for high-power ELC at room temperature.

Original languageEnglish
Article number8972369
Pages (from-to)1027-1033
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number3
Publication statusPublished - 1 Mar 2020
MoE publication typeA1 Journal article-refereed


  • Current spreading
  • diffusion-driven charge transport (DDCT)
  • lateral heterojunction (LHJ)
  • light-emitting diodes (LEDs)


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