Cul p-type thin films for highly transparent thermoelectric p-n modules

Bruno Miguel Morais Faustino*, Diogo Gomes, Jaime Faria, Taneli Juntunen, Guilherme Gaspar, Catarina Bianchi, Antonio Almeida, Ana Marques, Ilkka Tittonen, Isabel Ferreira

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)
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Abstract

Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of Cul have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (sigma = 1.1 x 10(4) Sm-1) and thermoelectric properties (ZT= 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.

Original languageEnglish
Article number6867
Number of pages10
JournalScientific Reports
Volume8
DOIs
Publication statusPublished - 2 May 2018
MoE publication typeA1 Journal article-refereed

Keywords

  • OXIDE

Equipment

OtaNano

Anna Rissanen (Manager)

Aalto University

Facility/equipment: Facility

  • Cite this

    Morais Faustino, B. M., Gomes, D., Faria, J., Juntunen, T., Gaspar, G., Bianchi, C., ... Ferreira, I. (2018). Cul p-type thin films for highly transparent thermoelectric p-n modules. Scientific Reports, 8, [6867]. https://doi.org/10.1038/s41598-018-25106-3