Abstract
Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of Cul have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (sigma = 1.1 x 10(4) Sm-1) and thermoelectric properties (ZT= 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.
Original language | English |
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Article number | 6867 |
Number of pages | 10 |
Journal | Scientific Reports |
Volume | 8 |
DOIs | |
Publication status | Published - 2 May 2018 |
MoE publication type | A1 Journal article-refereed |
Keywords
- OXIDE
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OtaNano - Nanomicroscopy Center
Seitsonen, J. (Manager) & Rissanen, A. (Other)
OtaNanoFacility/equipment: Facility