Crystalline imperfections in 4H SiC grown with a seeded Lely method

M. Tuominen, R. Yakimova, R.C. Glass, T. Tuomi, E. Janzen

    Research output: Contribution to journalArticleScientificpeer-review

    44 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)267-276
    JournalJournal of Crystal Growth
    Issue number144
    Publication statusPublished - 1994
    MoE publication typeA1 Journal article-refereed

    Keywords

    • imperfections
    • silicon carbide

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