Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

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Abstract

We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.

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Original languageEnglish
Article number015014
Number of pages8
JournalAIP ADVANCES
Volume7
Issue number1
Publication statusPublished - 1 Jan 2017
MoE publication typeA1 Journal article-refereed

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