Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint
Research output: Contribution to journal › Article › Scientific › peer-review
|Number of pages||8|
|Publication status||Published - 1 Jan 2017|
|MoE publication type||A1 Journal article-refereed|
We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.