Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

Jannatul Susoma; Jouko Lahtinen; Maria Kim; Juha Riikonen; Harri Lipsanen

doi:10.1063/1.4973918

Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

Jannatul Susoma
, Jouko Lahtinen
, Maria Kim
, Juha Riikonen
, Harri Lipsanen

Research output: Contribution to journal › Article › Scientific › peer-review

55 Citations (Scopus)

216 Downloads (Pure)

Abstract

We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al₂O₃ encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.

Original language	English
Article number	015014
Number of pages	8
Journal	AIP Advances
Volume	7
Issue number	1
DOIs	https://doi.org/10.1063/1.4973918
Publication status	Published - 1 Jan 2017
MoE publication type	A1 Journal article-refereed

Access to Document

10.1063/1.4973918

1.4973918Final published version, 15 MBLicence: CC BY

Cite this

@article{46e2224a96e647b299a89bf334c02f99,

title = "Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint",

abstract = "We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.",

author = "Jannatul Susoma and Jouko Lahtinen and Maria Kim and Juha Riikonen and Harri Lipsanen",

year = "2017",

month = jan,

day = "1",

doi = "10.1063/1.4973918",

language = "English",

volume = "7",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

AU - Susoma, Jannatul

AU - Lahtinen, Jouko

AU - Kim, Maria

AU - Riikonen, Juha

AU - Lipsanen, Harri

PY - 2017/1/1

Y1 - 2017/1/1

N2 - We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.

AB - We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.

UR - https://www.scopus.com/pages/publications/85009179395

U2 - 10.1063/1.4973918

DO - 10.1063/1.4973918

M3 - Article

AN - SCOPUS:85009179395

SN - 2158-3226

VL - 7

JO - AIP Advances

JF - AIP Advances

IS - 1

M1 - 015014

ER -

Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

Abstract

Access to Document

Other files and links

Fingerprint

OtaNano - Nanofab

Cite this

Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

Abstract

Access to Document

Other files and links

Fingerprint

Equipment

OtaNano - Nanofab

Cite this