Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

Jannatul Susoma; Jouko Lahtinen; Maria Kim; Juha Riikonen; Harri Lipsanen

doi:10.1063/1.4973918

Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

Jannatul Susoma, Jouko Lahtinen, Maria Kim, Juha Riikonen, Harri Lipsanen

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Abstract

We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al₂O₃ encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.

Original language	English
Article number	015014
Number of pages	8
Journal	AIP Advances
Volume	7
Issue number	1
DOIs	https://doi.org/10.1063/1.4973918
Publication status	Published - 1 Jan 2017
MoE publication type	A1 Journal article-refereed

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10.1063/1.4973918

1.4973918Final published version, 15 MBLicence: CC BY

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abstract = "We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.",

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AU - Kim, Maria

AU - Riikonen, Juha

AU - Lipsanen, Harri

PY - 2017/1/1

Y1 - 2017/1/1

N2 - We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.

AB - We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.

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Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

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Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

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