Cryogenic MMIC low-noise amplifiers for V-band

Mikko Varonen; Lorene Samoska; Pekka Kangaslahti; Andy Fung; Rohit Gawande; Mary Soria; Alejandro Persalta; Robert Lin; Richard Lai; Xiaobing Mei; Stephen Sarkozy

doi:10.1109/MWSYM.2017.8058970

Cryogenic MMIC low-noise amplifiers for V-band

Mikko Varonen, Lorene Samoska, Pekka Kangaslahti, Andy Fung, Rohit Gawande, Mary Soria, Alejandro Persalta, Robert Lin, Richard Lai, Xiaobing Mei, Stephen Sarkozy

Department of Electronics and Nanoengineering

Jet Propulsion Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

6 Citations (Scopus)

Abstract

In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.

Original language	English
Title of host publication	2017 IEEE MTT-S International Microwave Symposium, IMS 2017
Publisher	IEEE
Pages	172-175
Number of pages	4
ISBN (Electronic)	9781509063604
DOIs	https://doi.org/10.1109/MWSYM.2017.8058970
Publication status	Published - 4 Oct 2017
MoE publication type	A4 Conference publication
Event	IEEE MTT-S International Microwave Symposium - Honololu, United States Duration: 4 Jun 2017 → 9 Jun 2017

Publication series

Name	IEEE MTT-S International Microwave Symposium digest
ISSN (Print)	0149-645X

Conference

Conference	IEEE MTT-S International Microwave Symposium
Abbreviated title	IMS
Country/Territory	United States
City	Honololu
Period	04/06/2017 → 09/06/2017

Keywords

Cryogenic
InP HEMT
Low-noise amplifiers
MMIC

Access to Document

10.1109/MWSYM.2017.8058970

Cite this

Varonen, M., Samoska, L., Kangaslahti, P., Fung, A., Gawande, R., Soria, M., Persalta, A., Lin, R., Lai, R., Mei, X., & Sarkozy, S. (2017). Cryogenic MMIC low-noise amplifiers for V-band. In 2017 IEEE MTT-S International Microwave Symposium, IMS 2017 (pp. 172-175). Article 8058970 (IEEE MTT-S International Microwave Symposium digest). IEEE. https://doi.org/10.1109/MWSYM.2017.8058970

@inproceedings{e0f734f930974222ac8fa7bd007df0fa,

title = "Cryogenic MMIC low-noise amplifiers for V-band",

abstract = "In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.",

keywords = "Cryogenic, InP HEMT, Low-noise amplifiers, MMIC",

author = "Mikko Varonen and Lorene Samoska and Pekka Kangaslahti and Andy Fung and Rohit Gawande and Mary Soria and Alejandro Persalta and Robert Lin and Richard Lai and Xiaobing Mei and Stephen Sarkozy",

year = "2017",

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doi = "10.1109/MWSYM.2017.8058970",

language = "English",

series = "IEEE MTT-S International Microwave Symposium digest",

publisher = "IEEE",

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Varonen, M, Samoska, L, Kangaslahti, P, Fung, A, Gawande, R, Soria, M, Persalta, A, Lin, R, Lai, R, Mei, X & Sarkozy, S 2017, Cryogenic MMIC low-noise amplifiers for V-band. in 2017 IEEE MTT-S International Microwave Symposium, IMS 2017., 8058970, IEEE MTT-S International Microwave Symposium digest, IEEE, pp. 172-175, IEEE MTT-S International Microwave Symposium, Honololu, Hawaii, United States, 04/06/2017. https://doi.org/10.1109/MWSYM.2017.8058970

Cryogenic MMIC low-noise amplifiers for V-band. / Varonen, Mikko; Samoska, Lorene; Kangaslahti, Pekka et al.
2017 IEEE MTT-S International Microwave Symposium, IMS 2017. IEEE, 2017. p. 172-175 8058970 (IEEE MTT-S International Microwave Symposium digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AU - Varonen, Mikko

AU - Samoska, Lorene

AU - Kangaslahti, Pekka

AU - Fung, Andy

AU - Gawande, Rohit

AU - Soria, Mary

AU - Persalta, Alejandro

AU - Lin, Robert

AU - Lai, Richard

AU - Mei, Xiaobing

AU - Sarkozy, Stephen

PY - 2017/10/4

Y1 - 2017/10/4

N2 - In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.

AB - In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.

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Cryogenic MMIC low-noise amplifiers for V-band

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