Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier

Mikko Varonen, Kieran Cleary, Denizhan Karaca, Kari A.I. Halonen

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

2 Citations (Scopus)

Abstract

In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.

Original languageEnglish
Title of host publicationProceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
Place of PublicationUnited States
PublisherIEEE
Pages1503-1506
Number of pages4
Volume2018-June
ISBN (Print)9781538650677
DOIs
Publication statusPublished - 17 Aug 2018
MoE publication typeA4 Article in a conference publication
EventIEEE MTT-S International Microwave Symposium - Philadelphia, United States
Duration: 10 Jun 201815 Jun 2018

Publication series

NameIEEE MTT-S International Microwave Symposium
ISSN (Electronic)2576-7216

Conference

ConferenceIEEE MTT-S International Microwave Symposium
Abbreviated titleIMS
CountryUnited States
CityPhiladelphia
Period10/06/201815/06/2018

Keywords

  • CMOS
  • Cryogenic
  • low-noise amplifiers
  • MMIC

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