Cryogenic indium-phosphide HEMT low-noise amplifiers at V-band

J.M. Tanskanen, P. Kangaslahti, H. Ahtola, P. Jukkala, T. Karttaavi, M. Lahdes, J. Varis, J. Tuovinen

    Research output: Contribution to journalArticleScientificpeer-review

    Original languageEnglish
    Pages (from-to)1283-1286
    JournalIEEE Transactions on Microwave Theory and Techniques
    Volume48
    Issue number7
    Publication statusPublished - 2000
    MoE publication typeA1 Journal article-refereed

    Keywords

    • millimeter-wave low-noise amplifiers, MMICs, InP technology

    Cite this

    Tanskanen, J. M., Kangaslahti, P., Ahtola, H., Jukkala, P., Karttaavi, T., Lahdes, M., Varis, J., & Tuovinen, J. (2000). Cryogenic indium-phosphide HEMT low-noise amplifiers at V-band. IEEE Transactions on Microwave Theory and Techniques, 48(7), 1283-1286.