Cryogenic indium-phosphide HEMT low-noise amplifiers at V-band

J.M. Tanskanen; P. Kangaslahti; H. Ahtola; P. Jukkala; T. Karttaavi; M. Lahdes; J. Varis; J. Tuovinen

Cryogenic indium-phosphide HEMT low-noise amplifiers at V-band

J.M. Tanskanen, P. Kangaslahti, H. Ahtola, P. Jukkala, T. Karttaavi, M. Lahdes, J. Varis, J. Tuovinen

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	1283-1286
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	48
Issue number	7
Publication status	Published - 2000
MoE publication type	A1 Journal article-refereed

Keywords

millimeter-wave low-noise amplifiers, MMICs, InP technology

Cite this

@article{c26e6b0d26d548f2b5e932ff6df25a78,

title = "Cryogenic indium-phosphide HEMT low-noise amplifiers at V-band",

keywords = "millimeter-wave low-noise amplifiers, MMICs, InP technology, millimeter-wave low-noise amplifiers, MMICs, InP technology, millimeter-wave low-noise amplifiers, MMICs, InP technology",

author = "J.M. Tanskanen and P. Kangaslahti and H. Ahtola and P. Jukkala and T. Karttaavi and M. Lahdes and J. Varis and J. Tuovinen",

year = "2000",

language = "English",

volume = "48",

pages = "1283--1286",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "IEEE",

number = "7",

}

TY - JOUR

T1 - Cryogenic indium-phosphide HEMT low-noise amplifiers at V-band

AU - Tanskanen, J.M.

AU - Kangaslahti, P.

AU - Ahtola, H.

AU - Jukkala, P.

AU - Karttaavi, T.

AU - Lahdes, M.

AU - Varis, J.

AU - Tuovinen, J.

PY - 2000

Y1 - 2000

KW - millimeter-wave low-noise amplifiers, MMICs, InP technology

M3 - Article

SN - 0018-9480

VL - 48

SP - 1283

EP - 1286

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 7

ER -