Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures

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Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. / Broas, M.; Graff, A.; Simon-Najasek, M.; Poppitz, D.; Altmann, F.; Jung, H.; Blanck, H.

In: Microelectronics Reliability, Vol. 64, 01.09.2016, p. 541-546.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Broas, M, Graff, A, Simon-Najasek, M, Poppitz, D, Altmann, F, Jung, H & Blanck, H 2016, 'Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures' Microelectronics Reliability, vol. 64, pp. 541-546. https://doi.org/10.1016/j.microrel.2016.07.050

APA

Broas, M., Graff, A., Simon-Najasek, M., Poppitz, D., Altmann, F., Jung, H., & Blanck, H. (2016). Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. Microelectronics Reliability, 64, 541-546. https://doi.org/10.1016/j.microrel.2016.07.050

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Broas, M. ; Graff, A. ; Simon-Najasek, M. ; Poppitz, D. ; Altmann, F. ; Jung, H. ; Blanck, H. / Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. In: Microelectronics Reliability. 2016 ; Vol. 64. pp. 541-546.

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@article{6ea5bdd2306f4127832929790333807b,
title = "Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures",
abstract = "GaN/AlGaN HEMT structures are observed to undergo a reversible, drastic change in the leakage current when covered with an additional polymer passivation layer. The polymer layer induces a stress on the HEMT structures, which initiates material migration processes and the formation of structural defects, influencing the electrical performance. Local strain measurements were performed in the semiconductor, at the critical HEMT gate electrode, to evaluate the impact of the stress on the Schottky gates. The strain distributions in the structures were measured with nanobeam electron diffraction from electron-transparent samples at cross sections and longitudinal sections at the positions of high leakage currents. A variation of the strain distribution underneath the gate electrode was detected in a cross-sectional sample. On the contrary, only minor differences in the strain values were measured in the longitudinal sections at different photoemission sites. Finally, localized metal interdiffusion was detected at the sites with the highest photoemission intensities.",
keywords = "AlGaN, Diffusion, GaN, HEMT, NBED, Strain, TEM",
author = "M. Broas and A. Graff and M. Simon-Najasek and D. Poppitz and F. Altmann and H. Jung and H. Blanck",
year = "2016",
month = "9",
day = "1",
doi = "10.1016/j.microrel.2016.07.050",
language = "English",
volume = "64",
pages = "541--546",
journal = "Microelectronics Reliability",
issn = "0026-2714",

}

RIS - Download

TY - JOUR

T1 - Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures

AU - Broas, M.

AU - Graff, A.

AU - Simon-Najasek, M.

AU - Poppitz, D.

AU - Altmann, F.

AU - Jung, H.

AU - Blanck, H.

PY - 2016/9/1

Y1 - 2016/9/1

N2 - GaN/AlGaN HEMT structures are observed to undergo a reversible, drastic change in the leakage current when covered with an additional polymer passivation layer. The polymer layer induces a stress on the HEMT structures, which initiates material migration processes and the formation of structural defects, influencing the electrical performance. Local strain measurements were performed in the semiconductor, at the critical HEMT gate electrode, to evaluate the impact of the stress on the Schottky gates. The strain distributions in the structures were measured with nanobeam electron diffraction from electron-transparent samples at cross sections and longitudinal sections at the positions of high leakage currents. A variation of the strain distribution underneath the gate electrode was detected in a cross-sectional sample. On the contrary, only minor differences in the strain values were measured in the longitudinal sections at different photoemission sites. Finally, localized metal interdiffusion was detected at the sites with the highest photoemission intensities.

AB - GaN/AlGaN HEMT structures are observed to undergo a reversible, drastic change in the leakage current when covered with an additional polymer passivation layer. The polymer layer induces a stress on the HEMT structures, which initiates material migration processes and the formation of structural defects, influencing the electrical performance. Local strain measurements were performed in the semiconductor, at the critical HEMT gate electrode, to evaluate the impact of the stress on the Schottky gates. The strain distributions in the structures were measured with nanobeam electron diffraction from electron-transparent samples at cross sections and longitudinal sections at the positions of high leakage currents. A variation of the strain distribution underneath the gate electrode was detected in a cross-sectional sample. On the contrary, only minor differences in the strain values were measured in the longitudinal sections at different photoemission sites. Finally, localized metal interdiffusion was detected at the sites with the highest photoemission intensities.

KW - AlGaN

KW - Diffusion

KW - GaN

KW - HEMT

KW - NBED

KW - Strain

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=84991721532&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2016.07.050

DO - 10.1016/j.microrel.2016.07.050

M3 - Article

VL - 64

SP - 541

EP - 546

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

ER -

ID: 9396185