Correlation between Zn vacancies and photoluminescence emission in ZnO films

A. Zubiaga, J.A. Garcia, F. Plazaola, F. Tuomisto, K. Saarinen, J. Zuniga-Perez, V. Munoz-Sanjose

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Abstract

Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5nm (3.346eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy.
Original languageEnglish
Article number053516
Pages (from-to)1-6
Number of pages6
JournalJournal of Applied Physics
Volume99
Issue number5
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

Keywords

  • photoluminescence
  • positron annihilation
  • Zn vacancy
  • ZnO

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